Wafer HV

High power wafer test and sort

Equipment

1 site HV Wafer Probe (6kV/200A)

The FTI‑1000 is designed for high‑coverage wafer‑level testing of semicondcutor devices and wide‑bandgap technologies, with strong suitability for multisite probe applications.
FTI‑1000 addresses the characterization needs of DC and AC parameters directly at wafer probe, supporting both engineering characterization and high‑volume wafer testing. Thanks to its modular Tester‑per‑Channel Board architecture, users can configure independent resources into a single flexible and scalable platform tailored to any wafer‑level test requirement.
Control is managed through FTI Studio, an intuitive graphical interface that simplifies probe‑card bring‑up, test‑program development, and debug, making the system equally accessible to Designers and Test Engineers.

Reasons Why

Easily to configure

Simple setup and flexible options make it quick to tailor the system to your test needs

Engineering test coverage

Supports a wide range of electrical tests to fully characterise devices during development

User Friendliness

Clear interfaces and intuitive controls ensure smooth operation for engineering and production teams.

Product Presentation

The FTI‑1000 is a purpose‑built ATE system designed for high‑coverage wafer‑level testing of power discrete devices, wide‑bandgap components, and gate‑driver‑integrated power ICs. Suitable for both engineering characterization and high‑volume wafer sort, the system integrates independent DC and AC test resources capable of measuring all key MOSFET parameters, including DC characteristics, ΔVsd, inductive switching (UIL/UIS/CIS), gate charge, and gate resistance. Its modular Tester‑per‑Channel Board architecture, built on a USB‑based framework, enables straightforward system expansion and configuration flexibility for both single‑site and multisite probe applications.
With flexible resource partitioning and plug‑in options such as high‑voltage extensions, high‑current pulse modules, digitizers, and LCR‑based Rg measurement, the FTI‑1000 adapts seamlessly to a wide range of wafer‑level test requirements while maintaining a compact footprint. The architecture integrates cleanly with automated wafer probers and probe‑card interfaces—without being tied to any specific mechanical platform—making it equally effective for early‑stage device characterisation, process development, and high‑volume wafer‑sort operations.
FTI Studio software supports efficient test program development with tools such as waveform capture, automated data‑sheet generation, schmoo plotting, and AEC‑Q001 Rev. C PAT analysis. This combination of modular hardware, comprehensive test capability, and intuitive software makes the FTI‑1000 an ideal wafer‑test solution where flexibility, scalability, and high performance are essential, particularly in automotive, industrial, and wide‑bandgap power device sectors.

FEATURES/CONFIGURATIONS

Wafer HV

Wafer MV

Number of test sites
1
up to 16
DC parametric test
Rdson, Idon, Vce(sat), Vgs, Gfs, Igss, Idss, etc.
Rdson, Idon, Vce(sat), Vgs, Gfs, Igss, Idss, etc.
Gate oxide and quality
Rg, Cg, Qg
Rg, Cg, Qg
Thermal die-attach quality
dVsd/Vgs
dVsd/Vgs
UIS avalanche body diode quality
UIL, EAR, EAS
UIL, EAR, EAS

Dimensions

D⨯W⨯H
541mm ⨯ 345mm ⨯ 206mm
Power Supply: 345mm ⨯ 176mm ⨯ 103mm
541mm ⨯ 345mm ⨯ 206mm
Power Supply: 345mm ⨯ 176mm ⨯ 103mm

Digital

Digital Channels
Option for 8 independent Digital Channels (IC Channel Board)
Option for 8 independent Digital Channels (IC Channel Board)

AC Source

Voltage
5.5kV
1.2kV
Current
200A
100A
Avalanche Energy
>10J
>10J
Gate Voltage
+/-25V
+/-25V

Misc.

Gate Resistance
0,10,25,50 Ω , plus user pluggable R
0,10,25,50 Ω , plus user pluggable R
Load Inductor
Pluggable discrete inductors or selectable inductor box
Pluggable discrete inductors or selectable inductor box

DC Source

Voltage
6kV
1.2kV
Current Drive Range (HV)
10mA
25mA
Current
200A
100A

More info